МОДЕЛИРОВАНИЕ ТЕМПЕРАТУРНО-ЗАВИСИМОСТИ ОСЦИЛЛЯЦИИ ПОПЕРЕЧНОГО МАГНИТОСОПРОТИВЛЕНИЯ И ЭЛЕКТРОПРОВОДНОСТИ В ГЕТЕРОСТРУКТУРАХ С КВАНТОВЫМИ ЯМАМИ
Keywords:
Ключевые слова: Полупроводник, квантующее магнитное поле, осцилляция, двумерные полупроводниковые структуры, квантовая яма.Abstract
Аннотация. В данной статье исследовано влияние двумерной плотности
состояний на осцилляции поперечной электропроводности в гетероструктурах с
прямоугольными квантовыми ямами. Выведено новое аналитическое выражение
для расчета температурной зависимости осцилляции поперечной
электропроводности и магнитосопротивления квантовой ямы. Исследованы
осцилляции электропроводности и магнитосопротивления узкозонной
квантовой ямы с непароболическим законом дисперсии. Предложенной теорией
исследованы результаты эксперимериментов узкозонной квантовой ямы (In x Ga 1-
x Sb).
References
Литературы:
Yuzeeva N.A., Galiev G.B., Klimova E.A., Oveshnikov L.N., Lunin R.A.,
Kulbachinskii V.A. Experimental determination of the subband electron effective
mass in InGaAs/InAlAs HEMT-structures by the Shubnikov - de Haas effect at two
temperatures // Physics Procedia. 2015. Vol.72, pp.425-430.
https://doi.org/10.1016/j.phpro.2015.09.087
Tarquini V., Knighton T.,Wu Zh., Huang J., Pfeiffer L., West K. Degeneracy and
effective mass in the valence band of two-dimensional (100)-GaAs quantum well
systems // Applied Physics Letters. 2014. Vol.104, Iss.9, Article ID 092102.
https://doi.org/10.1063/1.4867086
Berkutov I.B., Andrievskii V.V., Komnik Yu.F., Kolesnichenko Yu.A., Morris
R.J.H., Leadley D.R. Magnetotransport studies of SiGe-based p-type
heterostructures: Problems with the determination of effective mass // Low
Temperature Physics. 2012. Vol.38, Iss.12, pp.1145-1452.
https://doi.org/10.1063/1.4770520
Abdullah Yar, Kashif Sabeeh. Radiation-assisted magnetotransport in two-
dimensional electron gas systems: appearance of zero resistance states // Journal of
Physics: Condensed Matter. 2015. Vol.27, No.43, Article ID 435007.
https://doi.org/10.1088/0953-8984/27/43/435007
Erkaboev U.I, Rakhimov R.G., Sayidov N.A. Influence of pressure on Landau
levels of electrons in the conductivity zone with the parabolic dispersion law //
Euroasian Journal of Semiconductors Science and Engineering. 2020. Vol.2., Iss.1.
Rakhimov R.G. Determination magnetic quantum effects in semiconductors at
different temperatures // VII Международной научнопрактической
конференции «Science and Education: problems and innovations». 2021. pp.12-
https://elibrary.ru/item.asp?id=44685006
Gulyamov G, Erkaboev U.I., Rakhimov R.G., Sayidov N.A., Mirzaev J.I. Influence
of a strong magnetic field on Fermi energy oscillations in two-dimensional
semiconductor materials // Scientific Bulletin. Physical and Mathematical
Research. 2021. Vol.3, Iss.1, pp.5-14
Erkaboev U.I., Sayidov N.A., Rakhimov R.G., Negmatov U.M. Simulation of the
temperature dependence of the quantum oscillations’ effects in 2D semiconductor
materials // Euroasian Journal of Semiconductors Science and Engineering. 2021.
Vol.3., Iss.1.
Gulyamov G., Erkaboev U.I., Rakhimov R.G., Mirzaev J.I. On temperature
dependence of longitudinal electrical conductivity oscillations in narrow-gap
electronic semiconductors // Journal of Nano- and Electronic Physic. 2020. Vol.12,
Iss.3, Article ID 03012. https://doi.org/10.1142/S0217979220500526
Erkaboev U.I., Gulyamov G., Mirzaev J.I., Rakhimov R.G. Modeling on the
temperature dependence of the magnetic susceptibility and electrical conductivity
oscillations in narrow-gap semiconductors // International Journal of Modern
Physics B. 2020. Vol.34, Iss.7, Article ID 2050052.
https://doi.org/10.1142/S0217979220500526
Erkaboev U.I., R.G.Rakhimov. Modeling of Shubnikov-de Haas oscillations in
narrow band gap semiconductors under the effect of temperature and microwave
field // Scientific Bulletin of Namangan State University. 2020. Vol.2, Iss.11.
pp.27-35
Gulyamov G., Erkaboev U.I., Sayidov N.A., Rakhimov R.G. The influence of
temperature on magnetic quantum effects in semiconductor structures // Journal of
Applied Science and Engineering. 2020. Vol.23, Iss.3, pp. 453–460.
https://doi.org/10.6180/jase.202009_23(3).0009
Erkaboev U.I., Gulyamov G., Mirzaev J.I., Rakhimov R.G., Sayidov N.A.
Calculation of the Fermi–Dirac Function Distribution in Two-Dimensional
Semiconductor Materials at High Temperatures and Weak Magnetic Fields // Nano.
Vol.16, Iss.9. Article ID 2150102.
https://doi.org/10.1142/S1793292021501022
Erkaboev U.I., R.G.Rakhimov. Modeling the influence of temperature on electron
landau levels in semiconductors // Scientific Bulletin of Namangan State
University. 2020. Vol.2, Iss.12. pp.36-42
Erkaboev U.I., Gulyamov G., Mirzaev J.I., Rakhimov R.G., Sayidov N.A.
Calculation of the Fermi-Dirac Function Distribution in Two-Dimensional
Semiconductor Materials at High Temperatures and Weak Magnetic Fields // Nano.
Vol.16, Iss.9, Article ID 2150102.
https://doi.org/10.1142/S0217984921502936
Erkaboev U.I., Rakhimov R.G., Sayidov N.A. Mathematical modeling
determination coefficient of magneto-optical absorption in semiconductors in
presence of external pressure and temperature // Modern Physics Letters B.2021.
Vol.35, Iss.17, Article ID 2150293. https://doi.org/10.1142/S0217984921502936
Erkaboev U.I., Rakhimov R.G., Mirzaev J.I., Sayidov N.A. The influence of
external factors on quantum magnetic effects in electronic semiconductor
structures // International Journal of Innovative Technology and Exploring
Engineering. 2020. Vol.9, Iss.5, pp. 1557-1563. https://www.ijitee.org/portfolio-
item/e2613039520/
Erkaboev U.I., Rakhimov R.G., Sayidov N.A., Mirzaev J.I. Modeling the
temperature dependence of the density oscillation of energy states in two-
dimensional electronic gases under the impact of a longitudinal and transversal
quantum magnetic fields // Indian Journal of Physics. 2022. Vol.96, Iss.10, Article
ID 02435. https://doi.org/10.1007/s12648-022-02435-8
Erkaboev U.I., Negmatov U.M., Rakhimov R.G., Mirzaev J.I., Sayidov N.A.
Influence of a quantizing magnetic field on the Fermi energy oscillations in two-
dimensional semiconductors // International Journal of Applied Science and
Engineering. 2022. Vol.19, Iss.2, Article ID 2021123.
https://doi.org/10.6703/IJASE.202206_19(2).004
Erkaboev U.I., Gulyamov G., Rakhimov R.G. A new method for determining the
bandgap in semiconductors in presence of external action taking into account lattice
vibrations // Indian Journal of Physics. 2022. Vol.96, Iss.8, pp. 2359-2368.
https://doi.org/10.1007/s12648-021-02180-4
U.I.Erkaboev, N.A.Sayidov, R.G.Rakhimov, U.M.Negmatov. Simulation of the
temperature dependence of the quantum oscillations’effects in 2D semiconductor materials // Euroasian Journal of Semiconductors Science and Engineering. 2021.
Vol.3, Iss.1, p.8
R.Rakhimov, U.Erkaboev. Modeling of Shubnikov-de Haas oscillations in narrow
band gap semiconductors under the effect of temperature and microwave field //
Scientific and Technical Journal of Namangan Institute of Engineering and
Technology. 2020. Vol.2, Iss.11, pp.27-35
R.Rakhimov, U.Erkaboev. Modeling the influence of temperature on electron
landau levels in semiconductors // Scientific and Technical Journal of Namangan
Institute of Engineering and Technology. 2020. Vol.2, Iss.12, pp.36-42
U.I.Erkaboev, R.G.Rakhimov, N.Y.Azimova. Determination of oscillations of the
density of energy states in nanoscale semiconductor materials at different
temperatures and quantizing magnetic fields // Global Scientific Review. 2023.
Vol.12, pp.33-49
G.Gulyamov, U.I.Erkaboev, R.G.Rakhimov, J.I.Mirzaev, N.A.Sayidov.
Determination of the dependence of the two-dimensional combined density of
states on external factors in quantum-dimensional heterostructures // Modern
Physics Letters B. 2023. Vol.37, Iss.10, Article ID 2350015
U.I.Erkaboev, R.G.Rakhimov. Determination of the dependence of the oscillation
of transverse electrical conductivity and magnetoresistance on temperature in
heterostructures based on quantum wells // East European Journal of Physics. 2023.
Issue 3, pp.133-145
U.I.Erkaboev, R.G.Rakhimov. Simulation of temperature dependence of
oscillations of longitudinal magnetoresistance in nanoelectronic semiconductor
materials // e-Prime-Advances in Electrical Engineering, Electronics and Energy.
Vol.5, pp.100236
U.I.Erkaboev, R.G.Rakhimov, J.I.Mirzaev, U.M.Negmatov, N.A.Sayidov.
Influence of a magnetic field and temperature on the oscillations of the combined
density of states in two-dimensional semiconductor materials // Indian Journal of
Physics. 2023. Vol.2023, pp.1-9
U.Erkaboev, R.Rakhimov, J.Mirzaev, N.Sayidov, U.Negmatov, M.Abduxalimov.
Calculation of oscillations in the density of energy states in heterostructural
materials with quantum wells // AIP Conference Proceedings. 2023. Volume 2789,
Issue 1
U.Erkaboev, R.Rakhimov, J.Mirzaev, N.Sayidov, U.Negmatov, A.Mashrapov.
Determination of the band gap of heterostructural materials with quantum wells at
strong magnetic field and high temperature // AIP Conference Proceedings. 2023.
Volume 2789, Issue 1
U.Erkaboev, R.Rakhimov, J.Mirzaev, U.Negmatov, N.Sayidov. Influence of the
two-dimensional density of states on the temperature dependence of the electrical conductivity oscillations in heterostructures with quantum wells // International
Journal of Modern Physics B. 2023. Article ID 2450185
R.G.Rakhimov. Clean the cotton from small impurities and establish optimal
parameters // The Peerian Journal. 2023. Volume 17, Pages 57-63
U.I.Erkaboev, N.A.Sayidov, U.M.Negmatov, J.I.Mirzaev, R.G.Rakhimov.
Influence temperature and strong magnetic field on oscillations of density of energy
states in heterostructures with quantum wells HgCdTe/CdHgTe // E3S Web of
Conferences. 2023. Volume 401, Pages 01090
U.I.Erkaboev, N.A.Sayidov, U.M.Negmatov, R.G.Rakhimov, J.I.Mirzaev.
Temperature dependence of width band gap in In x Ga 1-x As quantum well in
presence of transverse strong magnetic field // E3S Web of Conferences. 2023.
Volume 401, Pages 04042
U.I.Erkaboev, R.G.Rakhimov, U.M.Negmatov, N.A.Sayidov, J.I.Mirzaev.
Influence of a strong magnetic field on the temperature dependence of the two-
dimensional combined density of states in InGaN/GaN quantum well
heterostructures // E3S Web of Conferences. 2023. Volume 401, Pages 04042
Эркабоев У.И., Рахимов Р.Г., Мирзаев Ж.И., Сайидов Н.А., Негматов У.М.
Вычисление осцилляции плотности энергетический состояний в
гетеронаноструктурных материалах при наличии продольного и поперечного
сильного магнитного поля // Международные конференция: «Научные
основы использования информационных технологий нового уровня и
современные проблемы автоматизации». 25-26 апреля 2022. С. 341-344.
https://rep.bntu.by/handle/data/125284
Эркабоев У.И., Рахимов Р.Г., Мирзаев Ж.И., Сайидов Н.А., Негматов У.М.
Расчеты температурная зависимость энергетического спектра электронов и
дырок в разрешенной зоны квантовой ямы при воздействии поперечного
квантующего магнитного поля // Международные конференция: «Научные
основы использования информационных технологий нового уровня и
современные проблемы автоматизации». 25-26 апреля 2022. С. 344-347.
https://rep.bntu.by/handle/data/125284
Erkaboev U.I., Sayidov N.A., Mirzaev J.I., Rakhimov R.G. Determination of the
temperature dependence of the Fermi energy oscillations in nanostructured
semiconductor materials in the presence of a quantizing magnetic field // Euroasian
Journal of Semiconductors Science and Engineering. 2021. Vol.3, Iss.2, pp.47-52
