SYNTHESIZING MATERIALS BY LOW TEMPERATURE MOLECULAR BEAM EPITAXY METHOD

Abstract

GaAs semiconductor matrix to create a magnetic ordering it is necessary to
introduce ions of magnetic elements with a concentration much higher than the
solubility limit of these elements in GaAs. Obtaining structures with an impurity
concentration exceeding the solubility limit in a given semiconductor is possible only
by non-equilibrium methods, which include low-temperature molecular beam
epitaxy. However, even when using the LT MBE method, the possibility of obtaining
homogeneous epitaxial GaMnAs layers is limited by a number of conditions such as
the limiting Mn concentration and the temperature of the semiconductor substrate
during epitaxy. The range of epitaxy modes allowed for growing homogeneous
GaMnAs epitaxial layers is schematically shown in (Fig. 2. 1).The samples studied in
this work were obtained by molecular beam epitaxy of GaMnAs on a semi-insulating
GaAs substrate with a crystallographic orientation of (001).